NTB30N20
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(V GS = 0 Vdc, V DS = 200 Vdc, T J = 25 ° C)
(V GS = 0 Vdc, V DS = 200 Vdc, T J = 175 ° C)
Gate?Body Leakage Current (V GS = ± 30 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
200
?
?
?
?
?
307
?
?
?
?
?
5.0
125
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
V DS = V GS, I D = 250 m Adc)
Temperature Coefficient (Negative)
V GS(th)
2.0
?
2.9
?8.9
4.0
?
Vdc
mV/ ° C
Static Drain?to?Source On?State Resistance
R DS(on)
W
(V GS = 10 Vdc, I D = 15 Adc)
(V GS = 10 Vdc, I D = 10 Adc)
(V GS = 10 Vdc, I D = 15 Adc, T J = 175 ° C)
Drain?to?Source On?Voltage
(V GS = 10 Vdc, I D = 30 Adc)
V DS(on)
?
?
?
?
0.068
0.067
0.200
2.0
0.081
0.080
0.240
2.5
Vdc
Forward Transconductance (V DS = 15 Vdc, I D = 15 Adc)
g FS
?
20
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C iss
C oss
?
?
2335
380
?
?
pF
(V DS = 160 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
?
148
?
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C rss
?
75
?
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn?On Delay Time
t d(on)
?
10
?
ns
?
12
?
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 100 Vdc, I D = 18 Adc,
V GS = 5.0 Vdc, R G = 2.5 W )
(V DD = 160 Vdc, I D = 30 Adc,
V GS = 10 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
?
?
20
70
40
82
24
?
?
?
?
?
?
88
?
Gate Charge
(V DS = 160 Vdc, I D = 30 Adc,
V GS = 10 Vdc)
(V DS = 160 Vdc, I D = 18 Adc,
V GS = 5.0 Vdc)
Q tot
Q gs
Q gd
?
?
?
?
?
75
48
20
16
32
100
?
?
?
?
nC
BODY?DRAIN DIODE RATINGS (Note 3)
Forward On?Voltage
Reverse Recovery Time
(I S = 30 Adc, V GS = 0 Vdc)
(I S = 30 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 30 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
?
?
?
?
0.91
0.80
230
140
1.1
?
?
?
Vdc
ns
t b
?
85
?
Reverse Recovery Stored Charge
Q RR
?
1.85
?
m C
3. Indicates Pulse Test: P. W. = 300 m s max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
相关PDF资料
NTB35N15T4 MOSFET N-CH 150V 37A D2PAK
NTB52N10T4G MOSFET N-CH 100V 52A D2PAK
NTB5405NG MOSFET N-CH 40V 116A D2PAK
NTB5411NT4G MOSFET N-CH 60V 80A D2PAK
NTB5412NT4G MOSFET N-CH 60V 60A D2PAK
NTB5426NT4G MOSFET N-CH 60V 120A D2PAK
NTB5605T4G MOSFET P-CH 60V 18.5A D2PAK
NTB6410ANG MOSFET N-CH 100V 76A D2PAK
相关代理商/技术参数
NTB-3402 制造商:Quest Technology International Inc 功能描述:
NTB35N15 功能描述:MOSFET 150V 37A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB35N15G 功能描述:MOSFET 150V 37A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB35N15T4 功能描述:MOSFET 150V 37A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB35N15T4G 功能描述:MOSFET 150V 37A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB-3602 制造商:Quest Technology International Inc 功能描述:
NTB40603AS 制造商:IKO NIPPON THOMPSON 功能描述:AXL NDL RLR 40MM
NTB4302 功能描述:MOSFET 30V 74A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube